Method of forming single-crystalline thin film

Details Method of forming single-crystalline thin film Method of forming single-crystalline thin film

1993-07-26

1994-12-13

King, Roy V.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

505434, 505430, 505474, 505729, 505730, 505732, 427 62, 427596, C30B 2502, H01L 3924

Patent

active

053720890

ABSTRACT:
Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material is provided thereon with a mask which can prevent chemical species contained in a vapor phase from adhering to the base material. The base material is continuously moved along arrow A, to deliver a portion covered with the mask into the vapor phase for crystal growth. Thus, a thin film is successively deposited on the portion of the base material, which is delivered from under the mask, from the vapor phase. A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.

REFERENCES:
patent: 5206216 (1993-04-01), Yoshida
Patent Abstracts of Japan; vol. 15, No. 96 (C-812) 7 Mar. 1991.
Patent Abstracts of Japan, vol. 16, No. 95 (E-1175) 9 Mar. 1992.
Patent Abstracts of Japan, vol. 16, No. 48 (E-1163) 6 Feb. 1992.

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