Method of forming silicon structures with selectable optical cha

Details Method of forming silicon structures with selectable optical cha Method of forming silicon structures with selectable optical cha

1992-07-10

1993-12-28

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437105, 437200, C30B 2302

Patent

active

052736172

ABSTRACT:
Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

REFERENCES:
Lin et al. "Room Temperature Co-Deposition Grown Technique for Pinhole Reduction in Epitaxial CoSi.sub.2 on Si(111)" Appl. Phys. Lett 52 (1988), 804-806.
Fathauer et al. "Growth of Single-Crystal Columns of CoSi.sub.2 Embedded in Epitaxial Si on Si(111) by MBE" Appl. Phys. Letts. 55 (1989), 247-249.
Fathauer et al. "IR Response from Metallic Particles Embedded in a Single-Crystal Si Matrix; The Layered Internal Photoemission Sensor" Appl. Phys. Letters 57 (1990), 1419-1421.
Physical Review B, vol. 44, No. 3, 15 Jul., 1991, pp. 1345-1348.
NASA Tech. Brief, vol. 14, No. 5, Item 141, May 1990.

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