Method of forming silicon/silicon-germanium heterojunction bipol

Details Method of forming silicon/silicon-germanium heterojunction bipol Method of forming silicon/silicon-germanium heterojunction bipol

1994-10-11

1997-05-27

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438489, 438320, H01L 21265

Patent

active

056331797

ABSTRACT:
A heterojunction bipolar transistor. An active region is defined on a silicon collector layer. A silicon-germanium base layer characterized by an integral polycrystalline and epitaxial structure is deposited over the collector such that the epitaxial portion of the base covers substantially the entire active region of the collector. In one version, a field oxide region separates the polycrystalline part of the base layer from the remainder of the collector layer. Alternatively, the collector layer is also characterized by an integral polycrystalline and epitaxial structure; in this version the epitaxial part of the base overlies the epitaxial part of the collector.

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P. Narozny et al, "Si/SiGe Heterojunction Bipolar . . . By Molecular Beam Epitaxy", IEDM, pp. 562-565. 1988.
Subramanian Iyer et al, "Heterojunction . . . Using Si-Ge Alloys", IEEE Transactions On Electron Devices, vol. 36, No. 10, pp. 2043-2064. Oct. 1989.

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