Method of forming silicon-on-insulator wafer having...

Details Method of forming silicon-on-insulator wafer having... Method of forming silicon-on-insulator wafer having...

2008-03-25

2008-03-25

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S424000, C438S455000, C438S459000

Reexamination Certificate

active

11820713

ABSTRACT:
A method for forming a bonded SOI wafer is provided in which a first wafer having a single-crystal semiconductor region has a first dielectric layer disposed at an outer surface of the first wafer and a plurality of dielectric filled trenches extending from the outer surface inwardly into the single-crystal semiconductor region. The outer surface of the first wafer can then be bonded to the outer surface of a second wafer having a second single-crystal semiconductor region to form a bonded wafer having a bulk single-crystal semiconductor region, a buried dielectric layer overlying the bulk single-crystal semiconductor region, and a single-crystal semiconductor-on-insulator layer overlying the buried dielectric layer. The dielectric filled trenches may extend upwardly from the buried dielectric layer into the single-crystal semiconductor-on-insulator layer. The thickness of the semiconductor-on-insulator layer may then be reduced until uppermost surfaces of at least some of the dielectric filled trenches are at least partially exposed.

REFERENCES:
patent: 6242320 (2001-06-01), So
patent: 6884693 (2005-04-01), Yi

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