Method of forming silicon dioxide film containing germanium nano

Details Method of forming silicon dioxide film containing germanium nano Method of forming silicon dioxide film containing germanium nano

1996-05-28

1998-07-21

Dutton, Brian

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

H01L 2131, H01L 21469

Patent

active

057834989

ABSTRACT:
The present invention provides a method of forming a silicon dioxide film containing germanium (Ge) nanocrystals, including the steps of (a) depositing Ge doped silicon dioxide on a substrate by means of atmospheric pressure chemical vapor deposition by which Si-based organic source, Ge-based organic source and ozone are to be reacted with one another, and (b) annealing the thus deposited Ge doped silicon dioxide film under non-reactive or reducing gas atmosphere at a temperature sufficient to break Ge-O bonds. The present invention makes it possible to grow Ge nanocrystals in a silicon dioxide film so that the Ge nanocrystals have a size sufficient to perform quantum confinement effects, and thereby provides a film suitable for fabrication of new optical devices and electronic devices utilizing non-linear optical characteristics.

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de Oliveira et al; "Probing of the quantum dot size distribution in CdTe-doped glasses by photoluminescence excitation spectroscopy"; Jan. 1995; pp. 439-441; Applied Physics Letters, vol. 66, No. 4.
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Paine et al; "Visible photoluminescence from nanocrystalline Ge formed by H.sub.2 reduction of Si.sub.O 6 Ge.sub.0.4 O.sub.2 "; May 1993; pp. 2842-2844; Applied Physics Letters, vol. 62, No. 22.
Yumoto et al; "Observation of optical bistability in CdS.sub.x Se.sub.1-x -doped glasses with 25-psec switching time"; Oct. 1987; pp. 832-834; Optics Letters vol. 12, No. 10.
Veprek et al; "Tungsten dye induced fast blue/violet photoluminescence from nanocrystalline silicon-silica composite thin films" 1 Oct. 1995; pp. 2215-2217; Applied Physics Letters, vol. 67, No. 15.

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