Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-04-10
2007-04-10
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S792000
Reexamination Certificate
active
10710257
ABSTRACT:
A silicon nitride spacer material for use in forming a PFET device and a method for making the spacer includes the use of a dual-frequency plasma enhanced CVD process wherein the temperature is in the range depositing a silicon nitride layer by means of a low-temperature dual-frequency plasma enhanced CVD process, at a temperature in the range 400° C. to 550° C. The process pressure is in the range 2 Torr to 5 Torr. The low frequency power is in the range 0 W to 50 W, and the high frequency power is in the range 90 W to 110 W. The precursor gases of silane, ammonia and nitrogen flow at flow rates in the ratio 240:3200:4000 sccm. The use of the silicon nitride spacer of the invention to form a PFET device having a dual spacer results in a 10%–15% performance improvement compared to a similar PFET device having a silicon nitride spacer formed by a RTCVD process.
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Kelliher James T.
Narasimha Shreesh
Ramachandran Ravikumar
Sleight Jeffrey W.
Duong Khanh
Goodwin Kerry B.
Smith Zandra V.
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