Method of forming shallow trench isolation with chamfered...

Details Method of forming shallow trench isolation with chamfered... Method of forming shallow trench isolation with chamfered...

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S400000, C438S296000

Reexamination Certificate

active

06884714

ABSTRACT:
A method of forming shallow trench isolation with chamfered corners. First, a pad insulating layer, a first mask layer, and a second mask layer are sequentially formed on a substrate. The second mask layer, the first mask layer, and the pad insulating layer are patterned to form an opening exposing a portion of the substrate. Next, the substrate is etched using the patterned second mask layer as a mask to form a trench therein. Next, part of the second mask layer is removed to expose the first mask layer adjacent to the trench and result in the second mask layer having a tapered profile. Finally, the second mask layer, the first mask layer, the pad insulating layer, and the substrate are etched along the tapered profile of the second mask layer to chamfer corners of the trench.

REFERENCES:
patent: 5933749 (1999-08-01), Lee
patent: 6258692 (2001-07-01), Chu et al.
patent: 6323092 (2001-11-01), Lee
patent: 459339 (2001-10-01), None
patent: 4609074 (2001-10-01), None

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