Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...
Patent
1996-12-26
1999-02-02
Chapman, Mark
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with subsequent diverse...
438 63, 438 82, 438488, 136258, 136261, H01L 3118
Patent
active
058664718
ABSTRACT:
A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR.sup.1.sub.2).sub.n --, where R.sup.1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a .beta.-hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.
Beppu Tatsuro
Hayase Shuji
Hiraoka Toshiro
Kamata Atsushi
Sano Kenji
Chapman Mark
Kabushiki Kaisha Toshiba
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