Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-12-08
2000-05-02
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427573, H05H 124, B05D 306
Patent
active
060570059
ABSTRACT:
The present invention provides a forming method of a semiconductor thin film by a plasma CVD process comprising introducing a source gas and a high-frequency power into a film forming chamber to generate a plasma therein, thereby forming a semiconductor thin film on a substrate, wherein the frequency of the high-frequency power is within a range of 50 MHz to 2 GHz, the input power density thereof is within a range of 0.001 to 1.0 W/cm.sup.3, the discharge pressure is within a range of 0.005 to 0.5 Torr, the temperature of the substrate is within a range of 150 to 500.degree. C., and wherein a metal mesh is disposed so as to substantially confine the plasma between the substrate and a source gas introducing portion, thereby forming the semiconductor thin film.
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Canon Kabushiki Kaisha
King Roy V.
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