Method of forming semiconductor devices using gate electrode dim

Details Method of forming semiconductor devices using gate electrode dim Method of forming semiconductor devices using gate electrode dim

1998-02-11

2000-10-24

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

With measuring or testing

438301, 438303, 438305, G01R 3126, H01L 2166

Patent

active

061366161

ABSTRACT:
A semiconductor device having a controlled drive current strength is produced by varying dopant concentration to accommodate any variation in channel length, which is affected by variations in gate electrode dimension(s) from a desired value. After formation of the gate electrode on a substrate, its dimension(s) is measured and compared to a desired value. Based on any differences between the measured and desired values, the concentration of dopant implanted into the substrate is determined in order to counteract the variation in gate electrode dimension. This results in a change in dopant concentration that counteracts the effect of the variation in gate electrode dimension on the drive current strength. The present process provides enhanced control over the drive current strength of semiconductor devices and provides decreased variation within and between lots and corresponding increases in productivity.

REFERENCES:
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patent: 5834795 (1998-11-01), Lee
patent: 5923982 (1999-07-01), Kadosh et al.
Campbell, Stephen A., "The Science and Engineering of Microelectronic Fabrication," 1996, pp. 6-7.
English translation of JP358197878 by Takeuchi et al.

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