Method of forming semiconductor device including trench gate...

Details Method of forming semiconductor device including trench gate... Method of forming semiconductor device including trench gate...

2008-11-14

2011-11-08

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S195000, C438S196000, C438S206000, C438S207000, C438S212000, C438S259000, C438S268000, C438S294000, C438S270000

Reexamination Certificate

active

08053286

ABSTRACT:
A method of forming a semiconductor device is provided, which may include, but is not limited to, the following processes. Grooves may be formed in an insulating region and in a semiconductor region, while forming burrs near the boundary between the insulating region and the semiconductor region. Protection films may be selectively formed on inside walls of the grooves except on bottom walls of the grooves. A selective thermal process may be carried out in the presence of the protection films, thereby removing the burrs.

REFERENCES:
patent: 2003/0087503 (2003-05-01), Sakaguchi et al.
patent: 2007/0148884 (2007-06-01), Park et al.
patent: 2007/0224763 (2007-09-01), Fujimoto et al.
patent: 2009/0087550 (2009-04-01), Leusink et al.
patent: 2000-114362 (2000-04-01), None
patent: 2004-140039 (2004-05-01), None
patent: 2006-108243 (2006-04-01), None

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