Method of forming semiconductor device by crystallizing...

Details Method of forming semiconductor device by crystallizing... Method of forming semiconductor device by crystallizing...

2005-12-13

2005-12-13

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

Reexamination Certificate

active

06974763

ABSTRACT:
A substrate on which an amorphous silicon film is formed is placed in a vacuum chamber. An organic nickel vapor or gas is introduced into the chamber and then decomposed, so that a thin film containing nickel (a catalytic element which promotes crystallization of the amorphous silicon film) or a compound thereof is uniformly deposited on the amorphous silicon film. After that, the substrate is heated at a temperature such as 550° C. lower than a normal solid phase growth temperature for a short time such as 4 hours, to uniformly crystallize the amorphous silicon film. A crystalline silicon film is obtained by this crystallization process.

REFERENCES:
patent: 2414406 (1947-01-01), Colbert et al.
patent: 2450850 (1948-10-01), Colbert et al.
patent: 3617373 (1971-11-01), Mott
patent: 4657775 (1987-04-01), Shioiri et al.
patent: 4796083 (1989-01-01), Cherukuvi et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4992305 (1991-02-01), Erbil
patent: 5147826 (1992-09-01), Liu et al.
patent: 5264383 (1993-11-01), Young
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5352488 (1994-10-01), Spencer et al.
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5512320 (1996-04-01), Turner et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 6156627 (2000-12-01), Zhang et al.
patent: 6174374 (2001-01-01), Zhang et al.
patent: 0 174 553 (1986-03-01), None
patent: 61-63017 (1986-04-01), None
patent: 61-070716 (1986-04-01), None
patent: 63-155714 (1988-06-01), None
patent: 2-140915 (1990-05-01), None
patent: 2-222546 (1990-09-01), None
patent: 5-90518 (1993-04-01), None
patent: 6-029212 (1994-02-01), None
Maissel et al., Handbook of Thin Film Technology, McGraw-Hill Book Company, 1970, pp. 7-2 to 7-4.
F. Spaepen et al., Crucial Issues in Semic. Mat. & Proc. Technol., S. Coffa et al., eds, Metal-enhanced Growth of Si.
J.E. Greene et al., Thin Solid Films 34 (1976) 27, “Metal induced crystallization of R.F. sputtered a Si-films”.
G. Radnoczi et al., J. Appl. Phys., 69(9) (1991) 6394, “Al induced crystallization of a Si”.
A.V. Dvurechenskii et al., “Transport Phenomena in Amorphous Silicon Doped by Ion Implanataion of 3rdMetals”, Akademikian Lavrentec Propsekt 13, 630090 Novosibrisk 90, USSR, pp. 635-640.
T. Hempel, et al. Solid State Comm., 85,11(1993)921 “Needle-Like Crystallization of Ni Doped A-Si Thin Films”.
J.R. Bosnell, et al., Thin Solid Films, 6(1970) 161 “. . . The Influence of Contact Materials or . . . Crystallization . . . ”.
C. Hayzelden et al., Appl. Phys. Lett., 60,2(1992)225 “. . . TEM Studies of Silicide Mediated Crystallization . . . ”.
Y.N. Efokhin, et al., Appl. Phys. Lett., 63,23(1993) 3173 “. . . NiSiz Formation . . . on Preamorphized Silicon . . . ”.
T.T. Ngo, et al., Appl. Phys. Left. 66,15(1995) 1906-1908 “. . . Growth of Monodisperse Islands”.
Y. Kawazu et al., Jpn. J. Appl. Phys., 29,12(1990)2698 “. . . Crystallization of A-Si:H Induced by Nickel . . . ”.
D. Tonneau et al., J. de Physique, coll. C5, 5,50(1989)647 “. . . Metal Carbonyis for CVD of Microstrues”.
S. Wolfe & R.N. Tavber, “Silicon Processing got the VLSI Era” vol. I, 1986, p. 51-3, 335.
ASM Handbook, vol. 5, p. 510-531 (1994).

Affiliated with

Also associated with

Rating

Method of forming semiconductor device by crystallizing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor device by crystallizing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor device by crystallizing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3505890