Method of forming semiconductor device

Details Method of forming semiconductor device Method of forming semiconductor device

2008-07-21

2010-06-15

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546, C257SE21209

Reexamination Certificate

active

07736989

ABSTRACT:
A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask.

REFERENCES:
patent: 2004/0023451 (2004-02-01), Lee et al.
patent: 2005/0142796 (2005-06-01), Jung et al.
patent: 2007/0267692 (2007-11-01), Joo et al.
patent: 10-209262 (1998-08-01), None
patent: 2004-61973 (2004-07-01), None
patent: 2004-100672 (2004-12-01), None

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