Method of forming semiconductor crystal and semiconductor device

Details Method of forming semiconductor crystal and semiconductor device Method of forming semiconductor crystal and semiconductor device

1993-06-22

1995-07-11

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 44, 117 45, 117 54, 117 74, 117 75, 117931, C30B 1330

Patent

active

054311268

ABSTRACT:
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.

REFERENCES:
patent: 4255463 (1981-03-01), Rucha et al.
patent: 4262411 (1981-04-01), Jordan et al.
patent: 4388145 (1983-06-01), Hawkins et al.
patent: 4751193 (1988-06-01), Myrick
patent: 4897366 (1990-01-01), Smeltzer
patent: 5256562 (1993-10-01), Vu et al.
patent: 5304357 (1994-04-01), Sato et al.

Affiliated with

Also associated with

Rating

Method of forming semiconductor crystal and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor crystal and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor crystal and semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-496497