Method of forming semiconductor crystal and semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

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117 44, 117 45, 117 54, 117 74, 117 75, 117931, C30B 1330

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active

054311268

ABSTRACT:
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.

REFERENCES:
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patent: 4262411 (1981-04-01), Jordan et al.
patent: 4388145 (1983-06-01), Hawkins et al.
patent: 4751193 (1988-06-01), Myrick
patent: 4897366 (1990-01-01), Smeltzer
patent: 5256562 (1993-10-01), Vu et al.
patent: 5304357 (1994-04-01), Sato et al.

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