Method of forming semi-insulating silicon carbide single...

Details Method of forming semi-insulating silicon carbide single... Method of forming semi-insulating silicon carbide single...

2007-10-02

2007-10-02

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S103000, C117S105000

Reexamination Certificate

active

11052899

ABSTRACT:
Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent element(s) introduced by doping the SiC in a concentration that changes the SiC conductivity from n-type to semi-insulating. Related embodiments provide for the additional doping of the SiC single crystal with one or more deep level dopants. However, the resulting concentration of deep level dopants, as well as shallow donor or acceptor dopants, is not limited to concentrations below the detection limits of secondary ion mass spectrometry (SIMS) analysis.

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