Method of forming self-aligned contact pads of non-straight...

Details Method of forming self-aligned contact pads of non-straight... Method of forming self-aligned contact pads of non-straight...

2006-06-20

2006-06-20

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S588000

Reexamination Certificate

active

07064051

ABSTRACT:
Embodiments of the invention provide methods of forming SAC pads in non-straight semiconductor device having non-straight type or separate type active regions. A plurality of gate line structures extending in one direction may be formed on a semiconductor substrate having non-straight active regions. An interlayer insulating layer covering gate line structures may be formed on the gate line structures. Then, a photo-resist layer may be formed on the interlayer insulating layer. A photo-resist pattern may be formed through exposing and developing the photo-resist layer by using a photo-mask having, for example, a bar type, a wave type, or a reverse active type pattern. Then, contact holes exposing source/drain regions may be formed by etching the interlayer insulating layer using the photo-resist pattern as an etching mask. Contact pads may then be formed by filling the contact holes with a conductive material.

REFERENCES:
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patent: 5305252 (1994-04-01), Saeki
patent: 6031262 (2000-02-01), Sakao
patent: 6242332 (2001-06-01), Cho et al.
patent: 2005/0035387 (2005-02-01), Lee et al.
patent: 2000-208394 (2000-07-01), None
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English language abstract of Korean Patent Application No. 2003-0056712.
English language abstract of Korean Publication No. 10-0214524.
English language abstract of Japanese Publication No. 2000-208394.

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