Method of forming self-aligned contact in fabricating...

Details Method of forming self-aligned contact in fabricating... Method of forming self-aligned contact in fabricating...

2005-11-22

2005-11-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S587000, C438S588000, C438S637000

Reexamination Certificate

active

06967150

ABSTRACT:
According to some embodiments of the invention, a method of forming a self-aligned contact of a semiconductor device includes forming a plurality of conductive lines that are spaced apart from each other and pass over a plurality of conductive regions. An insulating layer is formed over and between the conductive lines. A plurality of contact holes are then formed to selectively expose the conductive regions by selectively removing the insulating layer without exposing the conductive lines. The contact holes are extended using an isotropic etching until the conductive lines begin to be exposed. Thereafter, contacts are formed in the contact holes such that the contacts are coupled to the conductive regions.

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patent: 6204161 (2001-03-01), Chung et al.
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patent: 2003-249572 (2003-09-01), None
patent: 2003-0032723 (2003-04-01), None
English language abstract of Korean Publication No. 2003-0032723.
English language abstract of Japanese Publication No. 2003-249572.

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