Method of forming resist pattern utilizing fluorinated resin ant

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430512, 430514, G03C 1835

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active

057285080

ABSTRACT:
A method of forming a resist pattern comprising forming a photoresist layer on a substrate, forming a transparent anti-reflective film on said photoresist layer by applying an anti-reflective material onto said photoresist layer, said anti-reflective material comprising a fluorinated resin which is soluble in an organic hydrocarbon solvent, exposing a light to said resist layer through said transparent anti-reflective film, removing said anti-reflective film using an organic hydrocarbon solvent, and developing said photoresist layer.

REFERENCES:
patent: 5246767 (1993-09-01), Agou et al.
patent: 5284902 (1994-02-01), Huber et al.
patent: 5392156 (1995-02-01), Kumagai et al.

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