Method of forming resist pattern utilizing antireflective layer

Details Method of forming resist pattern utilizing antireflective layer Method of forming resist pattern utilizing antireflective layer

1996-12-30

1999-03-30

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430311, 430510, 430512, G03F 711, G03F 730

Patent

active

058887032

ABSTRACT:
An antireflective layer comprises a binder component in the form of a rosin which is soluble in both a low polar organic solvent and an aqueous alkaline solution, and a light absorbing component which is also soluble in both the low polar organic solvent and the aqueous alkaline solution. In photolithography, the antireflective layer exhibits excellent anti-reflective properties in a predetermine UV wavelength region, and, when used for forming resist patterns, the antireflective layer can be applied dissolved in the low polar organic solvent in a manner which has no detrimental effect on the resist, and can be removed along with the resist during the development process using the aqueous alkaline solution.

REFERENCES:
patent: 5227495 (1993-07-01), Inagaki et al.

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