Method of forming resist pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S331000, C430S913000, C430S927000, C430S322000, C430S273100

Reexamination Certificate

active

08043795

ABSTRACT:
Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support1to form a first resist film2; selectively exposing the first resist film2through a first mask pattern, and developing it to form a first resist pattern3; applying a negative resist composition including an organic solvent (S″) containing an alcohol-based organic solvent on the support1that the first resist pattern3is formed, thereby forming a second resist film6; and selectively exposing the second resist film6through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern3.

REFERENCES:
patent: 5686223 (1997-11-01), Cleeves
patent: 6228552 (2001-05-01), Okino et al.
patent: 6306555 (2001-10-01), Schulz et al.
patent: 6309795 (2001-10-01), Abe et al.
patent: 6555607 (2003-04-01), Kanda et al.
patent: 6593063 (2003-07-01), Tanaka et al.
patent: 6806026 (2004-10-01), Allen et al.
patent: 7074543 (2006-07-01), Iwai et al.
patent: 7473512 (2009-01-01), Houlihan et al.
patent: 7528279 (2009-05-01), Hatakeyama et al.
patent: 7862986 (2011-01-01), Yang
patent: 2003/0045076 (2003-03-01), Hayashida
patent: 2003/0104319 (2003-06-01), Lin et al.
patent: 2003/0152864 (2003-08-01), Araki et al.
patent: 2003/0156992 (2003-08-01), Anderson et al.
patent: 2004/0058269 (2004-03-01), Hada et al.
patent: 2004/0241576 (2004-12-01), Iwashita et al.
patent: 2005/0079440 (2005-04-01), Hatakeyama et al.
patent: 2005/0124828 (2005-06-01), Breyta et al.
patent: 2005/0202340 (2005-09-01), Houlihan et al.
patent: 2006/0160028 (2006-07-01), Lee et al.
patent: 2006/0234154 (2006-10-01), Nishimura et al.
patent: 1 152 036 (2001-11-01), None
patent: H04-071222 (1992-03-01), None
patent: H05-055102 (1993-03-01), None
patent: 08-044070 (1996-02-01), None
patent: 2000-147783 (2000-05-01), None
patent: 2002-305135 (2002-10-01), None
patent: 2003-241385 (2003-08-01), None
patent: 2004-220009 (2004-08-01), None
patent: 2006-145788 (2006-06-01), None
patent: WO 00/67072 (2000-11-01), None
patent: WO 2004/074936 (2004-09-01), None
patent: WO 2004/076495 (2004-09-01), None
patent: WO 2006/054432 (2006-05-01), None
Ebihara, et al., Beyond k1=0.25 lithography: 70nm L/S patterning using KrF Scanners, Proceedings of SPIE, Sep. 9, 2003, vol. 5256, Part 2, p. 985 to 994.
Lee et al., Double exposure technology using silicon containing materials, Proceedings of SPIE, vol. 6153, Part 1, 61531K-1-8.
Nakamura et al., Contact Hole Formation by Multiple Exposure Technique in Ultra-low k1, Lithography, Optical Microlithography XVII, Proceedings of SPIE vol. 5377, No. 1, p. 255-263, (2004).
International Search Report for corresponding PCT Application No. PCT/JP2007/068089, dated Nov. 13, 2007.
Gil, D. et al. “First Microprocessors with Immersion Lithography”, Proceedings of SPIE, vol. 5754, pp. 119-128 (2005).
Borodovsky, Yan, “Marching to the beat of Moore's Law”, Proceedings of SPIE, vol. 6153, pp. 615301-1 to 615301-19 (2006).
Office Action issued in corresponding Japanese Patent Application No. 2004-331136, dated Jan. 27, 2009.
Office Action issued in corresponding Japanese Patent Application No. 2004-360297, dated Jan. 27, 2009.
Supplementary European Search Report issued in corresponding European Patent Application No. 05806132.6, dated May 25, 2010.
International Search Report from PCT/JP2005/020420, dated Jan. 31, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming resist pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming resist pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming resist pattern will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4292386

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.