Method of forming replacement metal gate with borderless...

Details Method of forming replacement metal gate with borderless... Method of forming replacement metal gate with borderless...

2010-11-17

2011-12-27

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S257000, C438S926000

Reexamination Certificate

active

08084311

ABSTRACT:
Embodiments of the present invention provide a method of forming borderless contact for transistor in a replacement metal gate process. The method includes forming a gate on top of a substrate and forming spacers adjacent to sidewalls of the gate; lowering height of the spacers to expose a top portion of the sidewalls of the gate; depositing an etch-stop layer covering the spacers and the upper portion of the sidewalls of the gate; making an opening at a level that is above the spacers and in the upper portion of the sidewalls to expose the gate; and replacing material of the gate from the opening with a new gate material thereby forming a replacement gate. The method further creates a via opening in an inter-level dielectric layer surrounding the gate and spacers, with the via opening exposing the etch-stop layer; removing the etch-stop layer and fill the via opening with a metal material to form borderless contact.

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