Method of forming refractory metal contact in an opening,...

Details Method of forming refractory metal contact in an opening,... Method of forming refractory metal contact in an opening,...

2005-05-31

2005-05-31

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S412000, C257S413000, C438S581000, C438S682000

Reexamination Certificate

active

06900505

ABSTRACT:
A structure which ensures against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents damage to an underlying silicide layer by blocking interaction between any fluorine and the underlying silicide that is released when the refractory material is formed.

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patent: 6303480 (2001-10-01), Desai et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: WO 99/00827 (1999-01-01), None

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