Method of forming recessed oxide isolation

Details Method of forming recessed oxide isolation Method of forming recessed oxide isolation

1992-04-30

1993-09-21

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 437 61, 437 69, H01L 21306

Patent

active

052465373

ABSTRACT:
A method requiring only a single mask results in an isolation oxide (50) which is the same size as, instead of becoming larger than, the dimension originally defined by the lithographic system. A buffer layer (14) is formed over the substrate (12). An oxidation resistant layer (16) is formed over the buffer layer (14). The oxidation resistant layer (16) is etched and a disposable sidewall spacer (30) is formed adjacent to the sidewall of the oxidation resistant layer (28), and a trench region is defined (36). The trench region (36) is etched to form a trench. The disposable sidewall spacer (30) is removed and a conformal layer (48) of oxidizable material is deposited over the trench sidewall (40) and the trench bottom surface (38). The conformal layer (48) is then oxidized to form electrical isolation in the isolation regions (26) of the substrate (12).

REFERENCES:
patent: 3961999 (1976-06-01), Antipov
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patent: 4472240 (1984-09-01), Kameyama
patent: 4923563 (1990-05-01), Lee et al.
patent: 4927780 (1992-05-01), Roth et al.
Kaga, T. et al., "Advanced OSELO Isolation with Shallow Grooves for High-Speed Submicrometer ULSI's", IEEE Transactions on Electron Devices, vol. ED35, No. 7, Jul., 1988, pp. 893-898.

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