Method of forming raised metallic contacts on electrical circuit

Details Method of forming raised metallic contacts on electrical circuit Method of forming raised metallic contacts on electrical circuit

1996-11-08

1998-07-28

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438612, 438614, 438977, H01L 2144, H01L 21463

Patent

active

057862702

ABSTRACT:
A method is provided for forming at least one raised metallic contact on an electrical circuit for permanent bonding. Generally, this method includes the following steps: providing a composite base substrate which is defined by at least a first conductive layer, a dielectric material and a second conductive layer; removing a portion of the first conductive layer to expose the dielectric material; removing the exposed portion of the dielectric material to the second conductive layer, thereby forming a depression; depositing at least one layer of solder on at least side wall portions of the depression; depositing at least one layer of copper; removing the second conductive layer; and completely removing the dielectric material to said first conductive layer thereby forming a raised solder contact which extends perpendicularly away from the first conductive layer.

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Van Nostrand Reinhold "Microelectronics Packaging Handbook" 1989, pp. 366-369, edited by Tummala et al.

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