Method of forming raised electrical contacts on a semiconductor

Details Method of forming raised electrical contacts on a semiconductor Method of forming raised electrical contacts on a semiconductor

1975-03-31

1976-11-23

Drummond, Douglas J.

Adhesive bonding and miscellaneous chemical manufacture

Methods

156 13, 156 17, 156 18, 204 15, 204 23, 204 32S, 204 38B, 427 91, H01L 21443, H01L 21445

Patent

active

039935159

ABSTRACT:
Raised electrical contacts are electroplated on selected previously metallized contacts of a semiconductor device. Each metallized contact is on a surface of a separate mesa, respectively, of the device and extends in a cantilever manner beyond the surface of the mesa. The electroplating of the raised electrical contacts is accomplished by the steps of (1) depositing a layer of a metal over the device, (2) applying a photoresist over the layer of the metal, (3) defining openings in the photoresist over areas of the metallized contacts where the raised contacts are to be formed, and (4) electroplating the raised contacts on the metallized contacts through the openings, using the layer of the metal as an electrode in an electroplating system.

REFERENCES:
patent: 3653999 (1972-04-01), Fuller
patent: 3689332 (1972-09-01), Dietrich et al.
patent: 3761785 (1973-09-01), Prunianx
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3809625 (1974-05-01), Brown et al.

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