Method of forming pre-metal dielectric film on a...

Details Method of forming pre-metal dielectric film on a... Method of forming pre-metal dielectric film on a...

2008-09-16

2008-09-16

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S624000, C438S761000, C438S763000, C438S783000, C438S784000, C438S787000, C257SE21243, C257SE21275, C257SE21279

Reissue Patent

active

10606426

ABSTRACT:
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume ratio. Then, a low-ozone doped BPSG film is deposited over the high-ozone undoped silicon dioxide layer. The film layers are heat treated to densify the film, and then the top layer is planarized using known planarization techniques to a thickness that allows for adequate mobile-ion gettering.

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