Method of forming polysilicon thin film transistor

Details Method of forming polysilicon thin film transistor Method of forming polysilicon thin film transistor

2006-03-21

2006-03-21

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C438S479000, C438S487000, C438S491000

Reexamination Certificate

active

07015122

ABSTRACT:
A method of forming a polysilicon thin film transistor is disclosed in the present invention. The method includes forming a buffer layer on a transparent substrate, forming an amorphous silicon layer on the buffer layer, crystallizing the amorphous silicon layer into a polysilicon layer using a sequential lateral solidification (SLS) method, patterning the polysilicon layer to form a polysilicon active layer, performing a rapid thermal annealing (RTA) process to the polysilicon active layer under a H2atmosphere, performing a rapid thermal oxidation (RTO) process to form a silicon-oxidized layer on the polysilicon active layer after the RTA process, and forming a metal layer over the transparent substrate to cover the silicon-oxidized layer.

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S. Matsuda, et al. “Novel Corner Rounding Process For Shallow Trench Isolation Utilizing MSTS (Micro-Structure Transformation of Silicon).”IEDM Technical Digest. pp. 137-140, 1998.

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