Method of forming polysilicon layer in semiconductor device

Details Method of forming polysilicon layer in semiconductor device Method of forming polysilicon layer in semiconductor device

2007-09-11

2007-09-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S257000, C257SE29129, C257SE21623, C257SE21635, C257SE21179

Reexamination Certificate

active

11016413

ABSTRACT:
Disclosed herein is a method of forming a polysilicon film of a semiconductor device. Upon deposition process of a polysilicon film, the inflow of a gas is reduced to 150 sccm to 250 sccm to control abnormal deposition depending upon excessive inflow of the gas. Accordingly, the interfacial properties of the polysilicon film can be improved. It is thus possible to improve an operating characteristic of a device by prohibiting concentration of an electric field at the portion.

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patent: 2003/0102503 (2003-06-01), Rabkin et al.
patent: 1404113 (2002-10-01), None
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