Method of forming polysilicon having a desired surface roughness

Details Method of forming polysilicon having a desired surface roughness Method of forming polysilicon having a desired surface roughness

1997-09-03

1999-10-05

Beck, Shrive

Coating processes

Measuring, testing, or indicating

4272481, 4273977, 438 7, 438398, 438964, E23C 1646

Patent

active

059620650

ABSTRACT:
A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process.

REFERENCES:
patent: 4155779 (1979-05-01), Auston et al.
patent: 4332833 (1982-06-01), Aspnes et al.
patent: 5372836 (1994-12-01), Imahashi et al.

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