Method of forming polycrystalline silicon layer and atomic...

Details Method of forming polycrystalline silicon layer and atomic... Method of forming polycrystalline silicon layer and atomic...

2010-02-26

2011-11-01

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S482000, C438S487000, C438S509000, C257SE21297, C257SE21324, C257SE21328

Reexamination Certificate

active

08048783

ABSTRACT:
A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

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