Method of forming polarization reversal area, apparatus...

Details Method of forming polarization reversal area, apparatus... Method of forming polarization reversal area, apparatus...

2011-07-12

2011-07-12

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Nongaseous phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C438S745000

Reexamination Certificate

active

07976717

ABSTRACT:
Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal.The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (μC/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship:in-line-formulae description="In-line Formulae" end="lead"?0.7×Ps≦Q≦5×Psin-line-formulae description="In-line Formulae" end="tail"?where Ps is the spontaneous polarization (μC/cm2) of the ferroelectric single crystal.

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