Method of forming plasma etch apparatus with conductive coating

Details Method of forming plasma etch apparatus with conductive coating Method of forming plasma etch apparatus with conductive coating

1991-10-24

1993-12-07

Dang, Thi

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

4272551, 4272552, 156345, 156643, H01L 2100

Patent

active

052682005

ABSTRACT:
An improved plasma etching apparatus is disclosed which includes an etch chamber having inner metal surfaces with a conductive coating formed thereon which is capable of protecting such inner metal surfaces from chemical attack by reactant gases such as halogen-containing gases used in said chamber during plasma etching processes. In a preferred embodiment, at least about 0.2 micrometers of a carbon coating is formed on the inner metal surfaces of the etch chamber by a plasma-assisted CVD process using a gaseous source of carbon and either hydrogen or nitrogen or both.

REFERENCES:
patent: 4419201 (1983-12-01), Levinstein et al.
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4491496 (1985-01-01), Laporte et al.
patent: 4526644 (1985-07-01), Fujiyama et al.
patent: 4816113 (1989-03-01), Yamazaki

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