Method of forming planar vacuum microelectronic devices with sel

Details Method of forming planar vacuum microelectronic devices with sel Method of forming planar vacuum microelectronic devices with sel

1990-12-24

1992-05-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156656, 156657, 1566591, 156662, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

051124360

ABSTRACT:
A method for forming on a substrate a microelectronic device having a first and second element. According to the method, a first conductive layer is deposited on the surface. Next, a cap material is deposited, then the first element and a first element cap are formed from the first conductive layer and the cap material respectively. A sacrificial material is conformally deposited, then a second conductive layer is conformally deposited. The second conductive layer is anisotropically etched to form the second element. Finally, the sacrificial material is anisotropically etched.

REFERENCES:
Brodie, Ivor, "Physical Considerations in Vacuum Microelectronics Devices," IEEE Transactions on Electron Devices, vol. 36, No. 11, Nov. 1989, 2641-2644.
Busta, H. H., J. E. Pogemiller and M. F. Roth, "Lateral Miniaturized Vacuum Devices," IEDM, 1989, 533-536.

Affiliated with

Also associated with

Rating

Method of forming planar vacuum microelectronic devices with sel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming planar vacuum microelectronic devices with sel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming planar vacuum microelectronic devices with sel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2425271