Method of forming photoresist pattern free from side-lobe...

Details Method of forming photoresist pattern free from side-lobe... Method of forming photoresist pattern free from side-lobe...

2007-03-13

2007-03-13

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S005000

Reexamination Certificate

active

10447856

ABSTRACT:
A method of forming a photoresist layer free from a side-lobe. A mask consists of a side-lobe region, a pattern region, and an intermediate region, wherein the side-lobe region is the corresponding area of the side-lobe that used to be produced in the photoresist layer, the pattern region is the corresponding area of the pattern formed in the photoresist layer, and the intermediate region is the area between the side-lobe region and the pattern region. The method is characterized in that the transmittance of the side-lobe region is set lower than that of the intermediate region so that the side-lobe region has the light intensity lower than threshold required to trigger the photoreaction of the material for said photoresist layer.

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patent: 6214497 (2001-04-01), Stanton
patent: 6291113 (2001-09-01), Spence
patent: 2003/0064300 (2003-04-01), Watanabe
patent: 2003/0165750 (2003-09-01), Tanaka et al.
patent: 2000-395786 (2000-12-01), None
patent: 374866 (1999-11-01), None

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