Method of forming phase change layer using a germanium...

Details Method of forming phase change layer using a germanium... Method of forming phase change layer using a germanium...

2011-08-23

2011-08-23

Chen, Bret (Department: 1715)

Coating processes

Electrical product produced

Metal coating

C427S124000, C427S126100, C427S250000, C427S255350, C438S478000, C438S382000

Reexamination Certificate

active

08003162

ABSTRACT:
A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and/or a flow rate of a reaction gas in the range of 0-1 slm.

REFERENCES:
patent: 5510502 (1996-04-01), Sugano et al.
patent: 2005/0127349 (2005-06-01), Horak et al.
patent: 2006/0180811 (2006-08-01), Lee et al.
patent: 2008/0075843 (2008-03-01), Kuh et al.
patent: 2009/0112009 (2009-04-01), Chen et al.
patent: 2009/0124039 (2009-05-01), Roeder et al.
patent: 2009/0212280 (2009-08-01), Werner et al.
patent: 2009/0215225 (2009-08-01), Stender et al.
patent: 2009/0305458 (2009-12-01), Hunks et al.
patent: 2009/0324821 (2009-12-01), Pore et al.
patent: 2001-163924 (2001-06-01), None
Dittmar, Kersten, et al., “Cyclopentadienyl Germanes as Novel Precursors for the CVD of Thin Germanium Films”. Chem. Vap. Deposition 2001, 7, No. 5, pp. 193-195.
Kyrsta, S., et al., “Deposition and characterization of Ge-Sb-Te layers for applications in optical data storage”. Applied Surface Science 179 (2001) pp. 55-60.
Campbell, Kristy A., et al., “Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers”. Microelectronics Journal 38 (2007) pp. 52-59.
Tumanskii, Boris, et al., “Radical Reactions of a Stable N-Heterocyclic Germylene: EPR Study and DFT Calculation”. JACS Communications 2005, 127, pp. 8248-8249.
Fedotova, Ya. V., et al., “Germylene with Chelating Phosphinohydrazide Ligands Ge(NPh-NPh-PPh2)2: Synthesis and Structure”. Doklady Chemistry, vol. 396, Part 1, 2004, pp. 92-94. Translated from Doklady Akademii Nauk, vol. 396, No. 1, 2004, pp. 65-67.
Glidewell, Christopher, et al., “Reactions of Diazo-compounds with the Electron-rich Germylene Ge[N(SiMe3)2]2 . . . ” J. Chem. Soc. Dalton Trans. 1987, pp. 2981-2986.
Yao, Shenglai, et al., “Isomerization of an N-Heterocyclic Germylene to an Azagermabenzen-1-ylidene and Its Coupling to a Unigque Bis(germylene)”. Organometallics, vol. 29, No. 21, 2010, pp. 5353-5357.

Affiliated with

Also associated with

Rating

Method of forming phase change layer using a germanium... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming phase change layer using a germanium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming phase change layer using a germanium... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2765215