Method of forming patterns of a semiconductor device...

Details Method of forming patterns of a semiconductor device... Method of forming patterns of a semiconductor device...

2011-07-05

2011-07-05

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S743000, C438S756000

Reexamination Certificate

active

07972967

ABSTRACT:
A method of forming patterns of a semiconductor device comprising forming an auxiliary layer over an underlying layer comprising a cell region and a select transistor region, forming a first passivation layer over the auxiliary layer, wherein the first passivation layer blocks the auxiliary layer of the select transistor region and opens the auxiliary layer of the cell region, and forming a first photoresist pattern having a narrower width than the first passivation layer over (a) the first passivation layer and (b) second photoresist patterns, each having a narrower width than the first photoresist pattern, over an opening region of the auxiliary layer, wherein a gap between the first and second photoresist patterns is identical in width with a gap defined between the second photoresist patterns.

REFERENCES:
patent: 7727889 (2010-06-01), Choi et al.
patent: 2009/0035584 (2009-02-01), Tran et al.
patent: 100874433 (2008-12-01), None
patent: 1020090072920 (2009-07-01), None

Affiliated with

Also associated with

Rating

Method of forming patterns of a semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming patterns of a semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming patterns of a semiconductor device... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2680284