Method of forming patterns in manufacturing microelectronic devi

Details Method of forming patterns in manufacturing microelectronic devi Method of forming patterns in manufacturing microelectronic devi

1983-06-06

1985-11-05

Kittle, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430317, 430323, 430270, 430280, 156643, 1566591, G03C 516

Patent

active

045514178

ABSTRACT:
A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is formed thereon. The material of the resist layer is a polymer or copolymer comprising trialkylsilyl group, dimethylphenylsilyl group or trialkoxysilyl group. The thickness of the resist film is so adjusted as to contain a sufficient number of trialkylsilyl, dimethylphenylsilyl or trialkoxysilyl groups per unit area of the resist pattern to thereby ensure high endurance of the resist to dry etching for etching the thick organic layer.

REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4237208 (1980-12-01), Desai et al.
patent: 4357369 (1982-11-01), Kilichowski et al.
patent: 4370405 (1983-01-01), O'Toole et al.
patent: 4481049 (1984-11-01), Reichmanis et al.
J. M. Moran and D. Maydan, "High Resolution, Steep Profile Resist Patterns", Journal of Vacuum Science and Technology, vol. 16, No. 6, Nov./Dec. 1979, pp. 1620-1624.
M. Suzuki, K. Saigo, H. Gokan, Y. Onishi, "Copolymers of Trimethylsilylstyrene with Chloromethylstyrene for a Bi-Layer Resist System", Chemical Abstracts, vol. 99, 1983, (Original Reference: Journal of Electrochemical Society, vol. 130, No. 9 (Sep. 1983) pp. 1962-1964), No. 99:166882h.
Suzuki et al., Journal of the Electrochemical Society, vol. 130, No. 6, 1983, pp. 1962-1964.
S. A. MacDonald et al., "Organometallic Resists: O.sub.2 RIE Resistant Materials Derived from Polystyrene", IBM Research, an abstract from a paper presented on May 31, 1983 at Los Angeles at 1983 International Symposium on Electron, Ion and Photon Beams, 2 pages.
S. A. MacDonald et al., "The Development of Oxygen Reactive Ion Etch Barriers Based on Poly(trimethylstannylstyrene)", Proceedings of American Chemical Society 186th National Meeting, vol. 49, 1983, Washington, D.C., pp. 104-106.

Affiliated with

Also associated with

Rating

Method of forming patterns in manufacturing microelectronic devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming patterns in manufacturing microelectronic devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming patterns in manufacturing microelectronic devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-295888