Method of forming patterns

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H05K 306

Patent

active

044031513

ABSTRACT:
Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.
The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.

REFERENCES:
patent: 4099062 (1978-07-01), Kitcher
patent: 4298803 (1981-11-01), Matsuura et al.

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