Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1992-02-18
1995-11-28
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430324, 430329, 430330, G03F 726
Patent
active
054706939
ABSTRACT:
A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
REFERENCES:
patent: 4353778 (1982-10-01), Fineman
patent: 4411735 (1983-10-01), Belani
patent: 4436583 (1984-03-01), Saiki
patent: 4690999 (1987-09-01), Numata et al.
patent: 4702792 (1987-10-01), Chow
patent: 4869777 (1989-09-01), Apschel et al.
patent: 5122439 (1992-06-01), Miersch
patent: 5153303 (1992-10-01), Jasne
R. Rubner, A Photopolymer--The Direct Way to Polyimide Patterns, Photographic Science and Engineering, 1979, pp. 303-309.
Ahmad Umar M.
Sachdev Krishna G.
Whitaker Joel R.
Ahsan Aziz M.
Duda Kathleen
International Business Machines - Corporation
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