Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Including heating
Reexamination Certificate
2006-02-14
2006-02-14
Duda, Kathleen (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Including heating
C430S311000, C430S950000
Reexamination Certificate
active
06998226
ABSTRACT:
A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 ° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.
REFERENCES:
patent: 5401613 (1995-03-01), Brewer et al.
patent: 6316165 (2001-11-01), Pavelchek et al.
patent: 6410209 (2002-06-01), Adams et al.
patent: 6420098 (2002-07-01), Mautz
patent: 6479200 (2002-11-01), Stirton
patent: 6529282 (2003-03-01), Stirton et al.
patent: 6610616 (2003-08-01), Koh et al.
patent: 6627391 (2003-09-01), Ito et al.
patent: 2003/0065164 (2003-04-01), Puligadda et al.
patent: 2003/0129527 (2003-07-01), Kudo et al.
Hung Yung Long
Wang Ya Chih
Wu Wen-Bin
Wu Yuan-Hsun
Duda Kathleen
Ladas & Parry LLP
Nanya Technology Corporation
LandOfFree
Method of forming patterned photoresist layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming patterned photoresist layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming patterned photoresist layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3704156