Method of forming pattern using fine pitch hard mask

Details Method of forming pattern using fine pitch hard mask Method of forming pattern using fine pitch hard mask

2008-12-03

2011-11-22

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S736000

Reexamination Certificate

active

08062981

ABSTRACT:
A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a substrate with a first pitch is formed. A first layer including a top surface where a recess is formed between adjacent first line patterns is formed. A second hard mask pattern including second line patterns within the recess is formed. An anisotropic etching process is performed on the first layer using the first and the second line patterns as an etch mask. Another anisotropic etching process is performed on the etch target layer using the first and the second hard mask patterns as an etch mask.

REFERENCES:
patent: 5679591 (1997-10-01), Lin et al.
patent: 6239008 (2001-05-01), Yu et al.
patent: 6380042 (2002-04-01), Huang
patent: 6403417 (2002-06-01), Chien et al.
patent: 7256126 (2007-08-01), Chen
patent: 2003/0027420 (2003-02-01), Lai et al.
patent: 2003/0207584 (2003-11-01), Sivakumar et al.
patent: 2004/0017989 (2004-01-01), So
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0263699 (2006-11-01), Abatchev et al.
patent: 01-140629 (1989-06-01), None
patent: 02-266517 (1990-10-01), None
patent: 05-088375 (1993-04-01), None
patent: 10-144660 (1998-05-01), None
patent: 100155880 (1998-07-01), None
patent: 100165399 (1998-09-01), None
Japanese Office Action dated Aug. 30, 2011.

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