Method of forming pattern using fine pitch hard mask

Details Method of forming pattern using fine pitch hard mask Method of forming pattern using fine pitch hard mask

2007-01-30

2009-08-18

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S702000, C438S719000, C438S723000

Reexamination Certificate

active

07576010

ABSTRACT:
A method of forming a first hard mask pattern including a plurality of first line patterns formed on the etch target layer in a first direction and having a first pitch. A third layer is formed on sidewalls and an upper surface of the first hard mask pattern, such that the third layer includes a top surface having a recess formed between two adjacent first line patterns. A second hard mask pattern including a plurality of second line patterns each extending in the first direction within the recess is formed. Then, the third layer is anisotropically etched to selectively expose an etch target layer between the first line patterns and the second line patterns. Then, the etch target layer is anisotropically etched using the first hard mask pattern and the second hard mask pattern as an etch mask.

REFERENCES:
patent: 6239008 (2001-05-01), Yu et al.
patent: 6835662 (2004-12-01), Erhardt et al.
patent: 7256126 (2007-08-01), Chen
patent: 2004/0017989 (2004-01-01), So
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0211260 (2006-09-01), Tran et al.
patent: 2006/0262511 (2006-11-01), Abatchev et al.
patent: 2007/0148968 (2007-06-01), Kwon et al.
patent: 2007/0161251 (2007-07-01), Tran et al.
patent: 2008/0124931 (2008-05-01), Lee et al.
patent: 100155880 (1998-07-01), None
patent: 100165399 (1998-09-01), None

Affiliated with

Also associated with

Rating

Method of forming pattern using fine pitch hard mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming pattern using fine pitch hard mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming pattern using fine pitch hard mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4114214