Method of forming pattern on group III nitride semiconductor...

Details Method of forming pattern on group III nitride semiconductor... Method of forming pattern on group III nitride semiconductor...

2009-04-24

2010-10-19

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S796000, C438S745000, C257SE21328

Reexamination Certificate

active

07816284

ABSTRACT:
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

REFERENCES:
patent: 2006/0046512 (2006-03-01), Nakamura et al.
patent: 2010/0090247 (2010-04-01), Yang et al.
patent: 10 2009 019 281 (2010-04-01), None
patent: 06-049672 (1994-02-01), None
patent: 2006-310657 (2006-11-01), None
patent: 10-2006-0050870 (2006-05-01), None
Korean Office Action, w/ English translation thereof, issued in Korean Patent Application No. KR 10-2008-0101586 dated Aug. 24, 2010.

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