Method of forming pattern of semiconductor device

Details Method of forming pattern of semiconductor device Method of forming pattern of semiconductor device

2011-07-12

2011-07-12

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S330000

Reexamination Certificate

active

07977033

ABSTRACT:
The present invention relates to a method of forming a pattern of a semiconductor device. According to the method in accordance with an aspect of the present invention, a photoresist film is formed on a semiconductor substrate. An exposure process is performed on a plurality of light transparent patterns arranged in tandem and the photoresist film corresponding between the light transparent patterns using a photomask including the light transparent patterns. A photoresist pattern is formed by performing a development process so that an opening portion of a line form is formed in the light transparent patterns and the photoresist film between the light transparent patterns. Accordingly, a uniform line pattern can be formed.

REFERENCES:
patent: 2005/0008942 (2005-01-01), Cheng et al.
patent: 2006109907 (2006-10-01), None

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