Method of forming pattern and apparatus for implementing the sam

Details Method of forming pattern and apparatus for implementing the sam Method of forming pattern and apparatus for implementing the sam

1990-03-06

1990-12-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156640, 156656, 156345, 252 792, 430 5, 430296, 430318, 430323, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

049768107

ABSTRACT:
Prior to etching by an etchant, a low concentration solution of cerium ammonium nitrate [(NH.sub.4).sub.2 Ce(NO.sub.5).sub.6 ] is caused to adhere onto an electron-beam resist pattern, thus to improve hydrophilic property of the resist pattern. As a result, a metal thin film is etched in conformity with the resist pattern. Thus, a fine pattern of the metal thin film is provided.

REFERENCES:
M. Kataoka, "Positive Type Electron Beam Resist", Electronic Material, Sep. 1989, pp. 61-72.

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