Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
1999-06-07
2001-08-07
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S311000, C430S313000, C430S316000, C430S317000, C430S318000, C430S323000, C216S049000
Reexamination Certificate
active
06270948
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a method of forming a pattern using an organosilicon film pattern as an etching mask.
The manufacturing method of a semiconductor device generally involves the steps of depositing a plurality of materials on a semiconductor wafer, and patterning these deposited films into a desired pattern. This patterning step is generally performed by the steps of depositing a photosensitive material called a resist on a work film (a film to be worked or processed) formed on the surface of the wafer thereby forming a resist film, selectively exposing this resist film to a patterning light using as a light source ultraviolet rays, and then developing the resist film.
It is important in this patterning process to prevent a reflection of the patterning light from the work film of the wafer. In order to solve this problem, Japanese Patent Unexamined Publication S/49-55280 describes a method of forming an antireflection film between a resist film and a work film. In this case, various materials may be employed as the antireflection film. However, in view of the possibility to utilize a spin-coating method which enables to save the process cost, the following materials are mainly employed.
(1) A material comprising a spin glass added with a dye (Jpn. J. Appl. Phys. Vol. 35 (1996) pp. L1257-L1259:
(2) A plasma-decomposition type resin such as polysulfone (Japanese Patent Unexamined Publication S/59-93448): and
(3) Polysilane (U.S. Pat. No. 5,401,614).
The employment of the material of (1) is accompanied with problems that when a chemical amplification type resist having a high resolution is employed, it is difficult to obtain an excellent resist profile, i.e. resulting in a resist profile exhibiting a footing or undercut of resist. The employment of the material of (2) is also accompanied with problems at the occasion of transcribing a resist pattern by making use of a dry etching method that since the etching rate of the antireflection film is almost identical with that of the resist, a resist pattern may be entirely lost during the etching of the antireflection film, thus making it difficult to work to obtain the antireflection film of desired dimension. In particular, when the film thickness of the resist is thinned to the same degree as that of the antireflection film with a view to enhance the resolution, this problem would become more serious.
On the other hand, the employment of the material (3) may sometimes cause a denaturing of the polysilane film at the occasion of transcribing a resist pattern by making use of a dry etching method thereby making it difficult to precisely perform the etching the polysilane film. Moreover, there is another problem that if etching of this polysilane film is performed by making use of a halogen type gas, the resist pattern may become thickened by a deposition material so that it is impossible to perform the etching with high dimensional control.
BRIEF SUMMARY OF THE INVENTION
Therefore, the object of the present invention is to provide a method of forming a pattern which is free from any denaturing of polysilane film and is capable of improving the etching selectivity between a resist and a polysilane film.
Another object of the present invention is to provide a method of forming a pattern which is capable of preventing the thickening of a resist pattern at the occasion of patterning a polysilane film.
Further object of the present invention is to provide a method of forming a pattern which makes it possible to perform the patterning with high dimensional control.
Further object of the present invention is to provide a method of forming a pattern which makes it possible to remove antireflection film without generating residues.
According to the present invention, there is provided a method of forming a pattern which comprises the steps of;
forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more;
forming a resist pattern on the organosilicon film; and
transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas comprising a gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine.
According to the present invention, there is provided a method of forming a pattern which comprises the steps of;
forming an organosilicon film on a work film, the organosilicon film containing an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more;
forming a resist pattern on the organosilicon film; and
etching the organosilicon film by making use of an etching gas comprising a gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine;
oxidizing the organosilicon film; and
etching the work film by making use of a pattern comprising the oxidized organosilicon film as an etching mask.
According to the present invention, there is provided a method of forming a pattern which comprises the steps of;
forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more;
forming a resist pattern on the organosilicon film;
etching the organosilicon film by making use of an etching gas comprising a gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine;
etching the work film by making use of a pattern comprising the organosilicon film as an etching mask; and
removing the pattern of the organosilicon film by making use of a mixture of a gas containing oxygen atom and a gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and fluorine.
Additional object and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The object and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
REFERENCES:
patent: 4599243 (1986-07-01), Sachdev et al.
patent: 4692205 (1987-09-01), Schdev et al.
patent: 4891303 (1990-01-01), Garza et al.
patent: 5059500 (1991-10-01), Needham et al.
patent: 5093224 (1992-03-01), Hashimoto et al.
patent: 5336365 (1994-08-01), Goda et al.
patent: 5372908 (1994-12-01), Hayase et al.
patent: 5380621 (1995-01-01), Dichiara et al.
patent: 5401614 (1995-03-01), Dichiara et al.
patent: 5624788 (1997-04-01), Murai et al.
patent: 5635338 (1997-06-01), Joshi et al.
patent: 5885751 (1999-03-01), Weidman et al.
patent: 6025117 (2000-02-01), Nakano
patent: 5-257288 (1993-10-01), None
Thompson et al., Introduction to Microlithography, ACS Symposium Series, pp. 232-242, 1983.*
Morisawa, Taku et al., “Chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process,”Journal of Photopolymer Science and Technology,V. 10, No. 4, pp. 589-594 (1997).
Nakano, Kaichiro et al., “Chemically Amplified Resist Based on High Etch-Resistant Polymers for 193-nm Lithography,”Journal of Photopolymer Science and Technology,V. 10, No. 4, pp. 561-570 (1997).
T.P. Chow and A.J. Steckel,Plasma Etching of Refractory Gates for VLSI Applications, 131 J. Electrochem. Soc. 2325-35 (1984).
Hayase Shuji
Kani Rikako
Matsuyama Hideto
Miyoshi Seiro
Nakano Yoshihiko
Barreca Nicole
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Huff Mark F.
Kabushiki Kaisha Toshiba
LandOfFree
Method of forming pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming pattern will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2505406