Method of forming pattern

Details Method of forming pattern Method of forming pattern

1996-08-29

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438702, 438947, 438942, 430314, 430316, H01L 21302

Patent

active

058997466

ABSTRACT:
A base is etched using as mask a first masking layer which has been patterned, softened and deformed. Then, the first masking layer is eroded, a second masking layer is selfaligningly formed only on bare portions of the base, and the base is again etched using as mask the second masking layer. Within a pitch of the first masking layer, the base can thus be etched in two regions which are separated from each other. These treatments can also be conducted in two directions.

REFERENCES:
patent: 4022932 (1977-05-01), Feng
patent: 4449287 (1984-05-01), Maas et al.

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