Method of forming passivation layers using deuterium containing

Details Method of forming passivation layers using deuterium containing Method of forming passivation layers using deuterium containing

1998-03-11

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, 438791, H01L 2131

Patent

active

060777915

ABSTRACT:
Deuterated compounds are used to form passivation (20) and other insulating layers to reduce the hydrogen content within those films. Semiconductor source gases, nitride source gases, and dopant gases can be obtained in deuterated form. Process steps for forming and etching are substantially the same as those used to form and etch conventional insulating layer. A sintering step can be performed using deuterated gas or omitted altogether.

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