Method of forming passivation film

Details Method of forming passivation film Method of forming passivation film

1994-09-27

1996-09-10

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, 4272553, 4272557, 4274193, 437238, B05D 306, C23C 1600

Patent

active

055544185

ABSTRACT:
A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.

REFERENCES:
patent: 4894352 (1990-01-01), Lane et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5364666 (1994-11-01), Williams et al.
Pierson, "Handbook Of Chemical Vapor Deposition (CVD), Principles, Technology and Applications", 1992 pp. 231-234.

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